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IRFBF30S, SiHFBF30S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
FEATURES
? Halogen-free According to IEC 61249-2-21
V DS (V)
900
Definition
R DS(on) ( ? )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
V GS = 10 V
78
10
42
Single
3.7
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
D 2 PAK (TO-263)
D
? Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G
ruggedized device design,
cost-effectiveness.
low on-resistance and
The D 2 PAK (TO-263) package is universially preferred for all
G D
commercial-industrial applications at power dissipation
S
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
S
N-Channel MOSFET
levels to approximately 50 W. The low thermal resistance
and low package cost of the D 2 PAK (TO-263) contribute to
its wide acceptance throughout the industry.
D 2 PAK (TO-263)
SiHFBF30S-GE3
IRFBF30SPbF
SiHFBF30S-E3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
900
± 20
UNIT
V
Continuous Drain Current
Current a
Pulsed Drain
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
I DM
3.6
2.3
14
A
Linear Derating Factor
1.0
W/°C
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
E AS
I AR
E AR
250
3.6
13
mJ
A
mJ
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T C = 25 °C
for 10 s
P D
dV/dt
T J , T stg
125
1.5
- 55 to + 150
300 d
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = 50 V, starting T J = 25 °C, L = 36 mH, R g = 25 ? , I AS = 3.6 A (see fig. 12).
c. I SD ? 3.6 A, dI/dt ? 70 A/μs, V DD ? 600, T J ? 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91389
S11-1055-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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